2sd2030, 2sd2031 silicon npn epitaxial ade-208-1163 (z) 1st. edition mar. 2001 application low frequency high voltage amplifier outline 1. emitter 2. collector 3. base to-92 (1) 3 2 1
2sd2030, 2sd2031 2 absolute maximum ratings (ta = 25?) item symbol 2sd2030 2sd2031 unit collector to base voltage v cbo 160 200 v collector to emitter voltage v ceo 160 200 v emitter to base voltage v ebo 55v collector current i c 100 100 ma collector power dissipation p c 400 400 mw junction temperature tj 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage 2sd2030 v (br)cbo 160 v i c = 10 m a, i e = 0 2sd2031 200 collector to emitter breakdown voltage 2sd2030 v (br)ceo 160 v i c = 1 ma, r be = 2sd2031 200 emitter to base breakdown voltage v (br)ebo 5 vi e = 10 m a, i c = 0 collector cutoff current 2sd2030 i cbo 10 m av cb = 140 v, i e = 0 2sd2031 v cb = 160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 200 v ce = 5 v, i c = 10 ma h fe2 30 v ce = 5 v, i c = 1 ma base to emitter voltage v be 1.5 v v ce = 5 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 0.5 v i c = 30 ma, i b = 3 ma gain bandwidth product f t 140 mhz v ce = 5 v, i c = 10 ma collector output capacitance c ob 3.8 pf v cb = 10 v, i e = 0, f = 1 mhz note: 1. the 2sd2030 and 2sd2031 are grouped by h fe1 as follows. grade b c h fe1 60 to 120 100 to 200
2sd2030, 2sd2031 3 0 50 100 150 ambient temperature ta ( c) collector power dissipation pc (mw) maximum collector dissipation curve 600 400 200 typical output characteristics 20 16 12 8 20 30 40 60 90 110 120 100 70 80 50 4 0 246810 collector current i c (ma) collector to emitter voltage v ce (v) i b = 0 10 m a typical transfer characteristics collector current i c (ma) base to emitter voltage v be (v) 1 2 5 10 20 50 100 0 0.2 0.4 0.6 0.8 1.0 v ce = 5 v pulse test ta = 75 c 25 ?5 dc current transfer ratio vs. collector current collector current i c (ma) 1 2 5 10 20 50 100 5 10 20 50 100 200 500 dc current transfer ratio h fe v ce = 5 v pulse test ta = 75 c ?5 25
2sd2030, 2sd2031 4 saturation voltage vs. collector current 0.05 0.1 0.2 1.0 2 5 0.5 collector current i c (ma) 1 2 5 10 20 50 100 collector to emitter saturation voltage v ce (sat) (v) base to emitter saturation voltage v be (sat) (v) v be (sat) v ce (sat) l c = 10 l b pulse test ta = ?5 c ta = ?5 c 25 75 25 75 gain bandwidth product vs. collector current collector current i c (ma) 0.5 1.0 2 5 10 20 50 5 10 20 50 100 200 500 gain bandwidth product f t (mhz) v ce = 5 v pulse test collector output capacitance vs. collector to base voltage collector output capacitance c ob (pf) collector to base voltage v cb (v) 1 2 5 10 20 50 100 0.5 1.0 2 5 10 20 50 f = 1 mhz i e = 0
2sd2030, 2sd2031 5 package dimensions 0.60 max 0.55max 4.8 0.4 3.8 0.4 5.0 0.2 0.7 2.3 max 12.7 min 0.5max 1.27 2.54 hitachi code jedec eiaj mass (reference value) to-92 (1) conforms conforms 0.25 g as of january, 2001 unit: mm
2sd2030, 2sd2031 6 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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